NDLI: Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer

Content Provider	IEEE Xplore Digital Library
Author	Tanaka, T. Miyabara, M. Nagao, Y. Saito, K. Qixin Guo Nishio, M. Kin Man Yu Walukiewicz, W.
Copyright Year	2011
Abstract	We present the results of systematic experimental studies on ZnTeO intermediate band solar cells (IBSCs) with a n-ZnO window layer. In order to understand photovoltaic (PV) activities of ZnTeO IBSCs, we first describe PV properties of ZnO/ZnTe solar cells without the intermediate band (IB). The improved efficiency of 1.38% is demonstrated by using a n⁺-ZnO/ i-ZnO/ i-ZnTe/ p-ZnTe structure. Then, the PV properties of ZnTeO IBSCs fabricated using n-ZnO window layer with and without a blocking barrier for IB are compared. The device with a blocked IB shows higher open-circuit voltage than that without the blocking barrier. High external quantum efficiency (EQE) is observed in the photon energy range in which electron transitions from the valence band to the IB take place in ZnTeO IBSC without the blocking layer, whereas the device with the blocked IB shows a small EQE at the same energy range, implying the electron accumulation in IB. Finally, the production of photogenerated current by two-step photon excitation via IB is demonstrated.
Starting Page	196
Ending Page	201
Page Count	6
File Size	2948271
File Format	PDF
ISSN	21563381
Volume Number	4
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Zinc oxide Photonics Substrates Lighting Photonic band gap Photoconductivity ZnTeO Highly mismatched alloy (HMA) intermediate band solar cell (IBSC) molecular beam epitaxy (MBE) two-step photon excitation (TPE)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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