NDLI: Green-Emitting <formula formulatype=inline><tex Notation=TeX>$(lambda=525~{rm nm})$</tex></formula> InGaN/GaN Quantum Dot Light Emitting Diodes Grown on Quantum Dot Dislocation Filters

Content Provider	IEEE Xplore Digital Library
Author	Banerjee, A. Frost, T. Jahangir, S. Bhattacharya, P.
Copyright Year	1965
Abstract	We have investigated the dislocation filtering characteristics of InGaN/GaN quantum dot multilayers grown at the substrate/active layer interface along the c-axis. Etch pit dislocation density measurements reveal a reduction in defect density by a factor of 5, from ~ 5×10⁸ cm^-2 to ~ 9.8×10⁷ cm^-2 in a GaN overlayer with an optimized quantum dot multilayer. This is accompanied by a reduction of electron and hole trap densities in the GaN layer by a factor of 3 and an increase in the luminescence efficiency of green-emitting In0.35Ga0.65N/GaN quantum dots grown atop such filters. Green-emitting (λ = 525 nm) quantum dot light emitting diodes having optimized dislocation filter show marked improvement in their current-voltage and light-current characteristics and in their external quantum efficiency. The peak efficiency is achieved at an injection level of 27 A/cm².
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	228
Ending Page	235
Page Count	8
File Size	1008938
File Format	PDF
ISSN	00189197
Volume Number	50
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Quantum dots Light emitting diodes Temperature measurement Electron traps III-V semiconductor materials Density measurement molecular beam epitaxy Dislocation filter quantum dots gallium nitride light emitting diode
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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