NDLI: Hardness Assurance for Proton Direct Ionization-Induced SEEs Using<newline/> a High-Energy Proton Beam

Content Provider	IEEE Xplore Digital Library
Author	Dodds, N.A. Schwank, J.R. Shaneyfelt, M.R. Dodd, P.E. Doyle, B.L. Trinczek, M. Blackmore, E.W. Rodbell, K.P. Gordon, M.S. Reed, R.A. Pellish, J.A. LaBel, K.A. Marshall, P.W. Swanson, S.E. Vizkelethy, G. Van Deusen, S. Sexton, F.W. Martinez, M.J.
Copyright Year	1963
Abstract	The low-energy proton energy spectra of all shielded space environments have the same shape. This shape is easily reproduced in the laboratory by degrading a high-energy proton beam, producing a high-fidelity test environment. We use this test environment to dramatically simplify rate prediction for proton direct ionization effects, allowing the work to be done at high-energy proton facilities, on encapsulated parts, without knowledge of the IC design, and with little or no computer simulations required. Proton direct ionization (PDI) is predicted to significantly contribute to the total error rate under the conditions investigated. Scaling effects are discussed using data from 65-nm, 45-nm, and 32-nm SOI SRAMs. These data also show that grazing-angle protons will dominate the PDI-induced error rate due to their higher effective LET, so PDI hardness assurance methods must account for angular effects to be conservative. We show that this angular dependence can be exploited to quickly assess whether an IC is susceptible to PDI.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2904
Ending Page	2914
Page Count	11
File Size	1285887
File Format	PDF
ISSN	00189499
Volume Number	61
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Protons Integrated circuits Error analysis Single event upsets Substrates Radiation effects single-event effects (SEEs) Energy straggle error rate prediction low energy protons proton direct ionization (PDI)
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle

The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

Hardness Assurance Testing for Proton Direct Ionization Effects

Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects

Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing

Electron-Induced Single-Event Upsets in Static Random Access Memory

Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam

Similar Documents

New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle

The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

Hardness Assurance Testing for Proton Direct Ionization Effects

Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects

Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing

Electron-Induced Single-Event Upsets in Static Random Access Memory

Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam