NDLI: Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Content Provider	IEEE Xplore Digital Library
Author	Meneghini, M. Rossetto, I. Bisi, D. Stocco, A. Chini, A. Pantellini, A. Lanzieri, C. Nanni, A. Meneghesso, G. Zanoni, E.
Copyright Year	1963
Abstract	This paper presents an extensive investigation of the properties of the trap with activation energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse (CC) in AlGaN/GaN HEMTs. The study was carried out on AlGaN/GaN HEMTs with increasing concentration of iron doping in the buffer. Based on pulsed characterization and drain current transient measurements, we demonstrate that for the samples under investigation: 1) increasing concentrations of Fe-doping in the buffer may induce a strong CC, which is related to the existence of a trap level located 0.63 eV below the conduction band energy and 2) this trap is physically located in the buffer layer, and is not related to the iron atoms but-more likely-to an intrinsic defect whose concentration depends on buffer doping. Moreover, we demonstrate that this level can be filled both under OFF-state conditions (by gate-leakage current) and under ON-state operation (when hot electrons can be injected to the buffer): for these reasons, it can significantly affect the switching properties of AlGaN/GaN HEMTs.
Sponsorship	IEEE Electron Devices Society
Starting Page	4070
Ending Page	4077
Page Count	8
File Size	3061529
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Logic gates MODFETs Doping Aluminum gallium nitride Electron traps HEMTs Transient analysis trap levels. Deep level transient spectroscopy (DLTS) defects gallium nitride high electron mobility transistor (HEMT) trap levels
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements