NDLI: Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part I

Content Provider	IEEE Xplore Digital Library
Author	Ambrogio, S. Balatti, S. Cubeta, A. Calderoni, A. Ramaswamy, N. Ielmini, D.
Copyright Year	1963
Abstract	Resistive switching memory (RRAM) relies on the voltage-driven formation/disruption of a conductive filament (CF) across a thin insulating layer. Due to the 1-D structure of the CF and discrete nature of defects, the set and reset states of the memory device generally display statistical variability from cycle to cycle. For projecting cell downscaling and designing improved programming operations, the variability as a function of the operation parameters, such as the maximum current in the set process and maximum voltage in the reset process, need to be evaluated and understood. This paper addresses set/reset variability, presenting statistical data for HfOx-based RRAM and introducing a physics-based Monte Carlo model for switching statistics. The model can predict the distribution of the set state as a function of the compliance (maximum) current during set and distribution of the reset state as a function of the stop (maximum) voltage during reset. Numerical modeling results are finally presented to provide additional insight into discrete fluctuation events.
Sponsorship	IEEE Electron Devices Society
Starting Page	2912
Ending Page	2919
Page Count	8
File Size	4660683
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Resistance Numerical models Hafnium compounds Integrated circuit modeling Analytical models resistive switching memory (RRAM). Noise fluctuations random telegraph noise (RTN) resistive switching memory (RRAM)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Statistical Fluctuations in HfO_x Resistive-Switching Memory: Part II—Random Telegraph Noise

Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior

A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State

Study of Multilevel High-Resistance States in HfO_x-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Microscopic Modeling of HfO_x RRAM Operations: From Forming to Switching

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

A Predictive Compact Model of Bipolar RRAM Cells for Circuit Simulations

Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

Statistical Fluctuations in HfO_x Resistive-Switching Memory: Part I - Set/Reset Variability

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