NDLI: A Novel Quasi-3-D Threshold Voltage Model for Fully Depleted Quadruple-Gate (FDQG) MOSFETs: With Equivalent Number of Gates (ENG) Included

Content Provider	IEEE Xplore Digital Library
Author	Te-Kuang Chiang
Copyright Year	2002
Abstract	Instead of solving the three-dimensional (3-D) Poisson's equation, we present a novel quasi-3-D threshold voltage model for fully depleted quadruple-gate (QG) MOSFETs based on the minimum central potential derived from the quasi-3-D scaling equation. Accounting for short-channel effects (SCEs) on the device, the natural length of the QG FET in the scaling equation is obtained from the equivalent number of gate equation of 1/ λ_QG² = 1/ λ_DG1²+1/ λ_DG2², where the QG device working in x-y-z space with natural length of λ_QG can be broken into two equivalent double-gate (DG) FETs with natural lengths of λ_DG1 and λ_DG2 working in y-z and x-z planes, respectively. Numerical simulation data for threshold voltage roll-off and drain-induced barrier lowering effects (DIBL) were compared to the model to validate the formula. Among QG FETs with the same perimeters, one with a square cross section will show the worst immunity to SCEs due to the largest natural length. With the criterion of DIBL≤50 mV, an improvement of up to 30% is illustrated in the minimum channel length for the QG MOSFET in comparison to the DG MOSFET.
Sponsorship	IEEE Nanotechnology Council
Starting Page	1022
Ending Page	1025
Page Count	4
File Size	605335
File Format	PDF
ISSN	1536125X
Volume Number	12
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mathematical model Threshold voltage MOSFET Equations Logic gates Semiconductor device modeling threshold voltage roll-off DIBL double-gate (DG) MOSFETs natural length quadruple-gate (QG) MOSFETs quasi-3-D scaling equation
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

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