NDLI: Junction Counters Produced by Ion Implantation Doping

Content Provider	IEEE Xplore Digital Library
Author	Martin, F. W. King, W. J. Harrison, S.
Copyright Year	1963
Abstract	Boron ions of 500 Kev and 100 Kev energy (0.7 microns and 0.14 microns range respectively) from a Van de Graaff accelerator have been used to fabricate 1/2 - inch diameter junction counters by bombarding the surface of etched 5000 ¿-cm and 10, 000 ¿-cm n-type silicon slices. After being passed through an analyzing magnet to obtain a spectroscopically pure beam, the ions were scanned by electrostatic deflection plates to obtain uniform irradiation of the samples. Boron concentration could be varied as a function of depth in the crystal by programmed rotation of the slices about an axis perpendicular to the beam. After post-irradiation annealing at 300°C to remove radiation damage, evaporated aluminum contacts were applied to the front and electroless nickel to the back. Initial investigation resulted in diodes with leakage as low as 10 ¿a at -100 volts and reverse breakdown voltage greater than -400 volts. The thinnest dead layer was 0.2 microns. Pulse height spectra taken with Po210 alpha particles (5.3 Mev), in general contained large numbers of counts at low pulse heights, presumably due to carrier trapping in radiation-induced crystal defects. The best counter had a resolution of 50 Kev with insignificant low energy noise.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	280
Ending Page	285
Page Count	6
File Size	2325148
File Format	PDF
ISSN	00189499
Volume Number	11
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1964-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Counting circuits Ion implantation Doping Radiation detectors Boron Ion accelerators Etching Silicon Electrostatic analysis Magnetic analysis
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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