NDLI: Study on a Metal–Insulator–Silicon Hydrogen Sensor With LaTiON as Gate Insulator

Content Provider	IEEE Xplore Digital Library
Author	Yu, J. Gang Chen Pui To Lai
Copyright Year	2001
Abstract	In this paper, by using a metal-insulator-semiconductor Schottky-diode structure, we examined the electrical and hydrogen-sensing properties of radio frequency sputtered LaTiON thin films that had been annealed at four different temperatures (450^°C, 550 ^°C, 650^°C, and 750^°C). Characterization of their morphological surface indicates that their average surface roughness decreases from 0.108 to 0.090 nm with increasing annealing temperature. X-ray diffraction shows the growths of La and Ti are in the 1 0 0 direction, i.e., in parallel to the Si substrate. Analysis of measured electrical characteristics indicates that thermionic emission is the dominant mechanism at low temperatures (from RT to 150^°C), while Poole-Frenkel emission plays an important role at high temperatures (above 150 ^°C) in the electrical conduction. Results suggest that the sample annealed at 650^°C has the most promising hydrogen-sensing performance (better current-voltage characteristics, higher sensitivity of 2.0 at 100^°C) among the four samples.
Sponsorship	IEEE Sensors Council
Starting Page	1534
Ending Page	1540
Page Count	7
File Size	908062
File Format	PDF
ISSN	1530437X
Volume Number	13
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Temperature measurement Films Temperature sensors Hydrogen Silicon Surface morphology sensor High-k dielectric hydrogen Schottky diode
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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