NDLI: Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor

Content Provider	IEEE Xplore Digital Library
Author	Lal, S. Jing Lu Gupta, G. Thibeault, B.J. DenBaars, S.P. Mishra, U.K.
Copyright Year	1980
Abstract	A unipolar transistor consisting of an In_0.53Ga_0.47As (InGaAs) channel and a III-Nitride (III-N)-based drain-region with a maximum on-current of 192 mA/mm is reported. This unique device is realized by employing wafer-bonding to a current aperture vertical electron transistor and is referred to as a wafer-bonded aperture vertical electron transistor (BAVET). An In_0.52Al_0.48As/InGaAs layer-stack is used for the gate-barrier and channel regions, while the aperture, current-blocking-layer (CBL) and drift regions are part of the III-N layer structure. This letter investigates the factors affecting the off-characteristics of a BAVET by varying the overlaps of the gate-CBL (L_GO) and gate-aperture (L_GA) regions. A dual-functionality of modulating the channel and providing a field-plate effect is realized using the L_GO and L_GA parts of the gate, respectively. We report that the improvement in channel-pinch off is a stronger function of L_GA than it is of L_GO. A weak pinch off in the InGaAs channel is shown to be the consequence of impact-ionization leading to channel-breakdown, and using a gate-aperture overlap dramatically improves both the pinch off and off-state-breakdown in BAVETs.
Sponsorship	IEEE Electron Devices Society
Starting Page	1500
Ending Page	1502
Page Count	3
File Size	898106
File Format	PDF
ISSN	07413106
Volume Number	34
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gate leakage Indium gallium arsenide Apertures Transistors Gallium nitride Electric breakdown vertical transistor Bonded aperture vertical electron transistor (BAVET) current aperture vertical electron transistor (CAVET) direct wafer-bonding field-plate GaN impact-ionization InGaAs
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs)

Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching

Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

High Breakdown ($> hbox{1500 V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor

Similar Documents

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs)

Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching

Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

High Breakdown ($> hbox{1500 V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor