NDLI: Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects

Content Provider	IEEE Xplore Digital Library
Author	Po-Kang Yang Wen-Yuan Chang Po-Yuan Teng Shuo-Fang Jeng Su-Jien Lin Po-Wen Chiu Jr-Hau He
Copyright Year	1963
Abstract	A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent transparency (less than 2% absorptance by graphene) but also reversible resistive switching characteristics. The statistical analysis including cycle-to-cycle and cell-to-cell tests for almost 100 cells shows that graphene plays a significant role to suppress the surface effect, giving rise to the notable increase in the switching yield and the insensitivity to the environmental atmosphere. The resistance variation of high-resistance state of ZnO is greatly suppressed by covering graphene as well. The device reliability investigation, such as the endurance more than 10² cycles and the retention time longer than 10⁴ s, reveals the robust passivation of graphene for TRRAM applications. The obtained insights show guidelines not only for TRRAM device design and optimization against the undesired switching parameter variations but also for developing practically useful applications of graphene.
Sponsorship	IEEE Publication
Starting Page	1732
Ending Page	1739
Page Count	8
File Size	990569
File Format	PDF
ISSN	00189219
Volume Number	101
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-07-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Graphene Zinc oxide Switches Indium tin oxide Electrodes Random access memory transparent resistance random access memory (TRRAM) resistive switching surface effect
Content Type	Text
Resource Type	Article
Subject	Computer Science Electrical and Electronic Engineering

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