NDLI: Theoretical Study of the Gate Leakage Current in Sub-10-nm Field-Effect Transistors

Content Provider	IEEE Xplore Digital Library
Author	Fischetti, M.V. Bo Fu Vandenberghe, W.G.
Copyright Year	1963
Abstract	Scaling field-effect transistors (FETs) with conventional semiconductor channels requires a reduction of the body or fin thickness or of the diameter of the nanowire (NW) channel. We present a theoretical study showing that the increase of the ground-state sub-band energy induced by the quantum confinement associated with this scaling results in a dramatic reduction of the barrier at the channel/gate-insulator interface, which causes an increase of the leakage current across the gate insulator. We have studied the problem using scaling rules extracted from the 2011 International Technology Roadmap for Semiconductors (ITRS)-Roadmap (finding them excessively relaxed) and using more strict scaling rules from the literature confirmed by simulations of 5-nm gate-length III-V FETs. Employing local empirical pseudopotentials to calculate the electronic structure of Si and InAs thin bodies, the leakage gate current in the ON-state is shown to reach worrisome values at gate lengths of about 5 nm. This suggests that 1-D channels (i.e., NWs), but especially channels based on intrinsically 2-D (e.g., graphene/graphane or transition-metals dichalcogenides) or 1-D (e.g., carbon nanotubes) structures, are required to push scaling toward the 5-nm node.
Sponsorship	IEEE Electron Devices Society
Starting Page	3862
Ending Page	3869
Page Count	8
File Size	1164814
File Format	PDF
ISSN	00189383
Volume Number	60
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Insulators Field effect transistors Leakage currents Tunneling Silicon Hafnium compounds scaling Gate leakage quantum confinement
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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