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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pancheri, L. Massari, N. Stoppa, D. |
| Copyright Year | 1963 |
| Abstract | This paper presents a 32 × 32 pixel image sensor for time-gated fluorescence lifetime detection based on single-photon avalanche diodes. The sensor, fabricated in a high-voltage 0.35- μm CMOS technology, uses an analog counting approach to minimize the area occupation of pixel electronics while maintaining a nanosecond timing resolution and shot-noise-limited operation. The all nMOS pixel is formed by 12 transistors and features 25- μm pitch and 20.8% fill factor. The chip includes a phase-locked loop circuit for gating window generation, working at a maximum repetition frequency of 40 MHz, while the sensor can be gated at frequency up to 80 MHz using an external delay generator. Optical characterization with a picosecond-pulsed laser showed a minimum gating window width of 1.1 ns. Example images acquired in both continuous and time-gated mode are presented, together with a lifetime image obtained with the sensor mounted on a fluorescence microscope. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 3442 |
| Ending Page | 3449 |
| Page Count | 8 |
| File Size | 2165750 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 60 |
| Issue Number | 10 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-10-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Photonics Logic gates Timing Radiation detectors Image resolution Phase locked loops time gating Analog counter CMOS image sensor fluorescence lifetime imaging (FLIM) single-photon avalanche diode (SPAD) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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