NDLI: Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Content Provider	IEEE Xplore Digital Library
Author	Persson, K.-M. Berg, M. Borg, M.B. Jun Wu Johansson, S. Svensson, J. Jansson, K. Lind, E. Wernersson, L.-E.
Copyright Year	1963
Abstract	This paper presents dc and RF characterization as well as modeling of vertical InAs nanowire (NW) MOSFETs with L_G=200 nm and Al₂O₃/HfO₂ high-κ dielectric. Measurements at V_DS=0.5 V show that high transconductance (g_m=1.37 mS/μm), high drive current (I_DS=1.34 mA/μm), and low ON-resistance (R_ON=287 Ωμm) can be realized using vertical InAs NWs on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, S_VG·L_G·W_G, is determined to be lowered by one order of magnitude compared with similar devices with a high-κ film consisting of HfO₂ only. In addition, with a virtual source model we are able to determine the intrinsic transport properties. These devices (L_G=200 nm) show a high injection velocity (v_inj=1.7×10⁷ cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.
Sponsorship	IEEE Electron Devices Society
Starting Page	2761
Ending Page	2767
Page Count	7
File Size	1058618
File Format	PDF
ISSN	00189383
Volume Number	60
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Resistance Transconductance Current measurement MOSFET Radio frequency RF InAs nanowire (NW)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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