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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ueta, G. Wada, J. Okabe, S. Miyashita, M. Nishida, C. Kamei, M. |
| Copyright Year | 1994 |
| Abstract | Gas insulated switchgear (GIS) has been widely applied in power equipment since the late 1960s due to its reliability and compactness. Because epoxy insulators in GIS are important insulation components that affect the dielectric withstand level and the equipment lifetime, high voltage tests and sensitive partial discharge (PD) tests have been carried out on them in the factory. If a latent defect occurs inside an actual epoxy insulator, its size is predicted to be small, such as a micro-defect, because it will have passed rigorous tests and multiple inspections at the factory. Although many studies have clarified the fundamental phenomena of deterioration caused by PD occurring due to defects in inner epoxy, little is known about the actual size of such defects and their effect on insulation properties. Therefore, to assess the risks associated with aging GIS equipment, it is essential to understand the actual size of latent defects in inner epoxy insulators of GIS and the impact the defects have on the insulation performance. The puncture properties and PD characteristics of artificial micro-defects of cracks, voids, and delaminations produced using an accurate estimation technique and precise production control were investigated and are described. The results suggest that an estimation method using electric field analysis is useful for designing the defect shape and that the breakdown voltage depends on the three-dimensional shape of the defect. Techniques for accurate estimation of small defects in epoxy resin and stable production of micro-defects have thus been achieved. |
| Sponsorship | National Natural Science Foundation of China (NSFC) Region Centre Ville de Tours Conseil General D'Indre et Loire ABB IEEE Sandia National Laboratories TOSHIBA |
| File Size | 593043 |
| File Format | |
| ISSN | 10709878 |
| Volume Number | 19 |
| Issue Number | 3 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-06-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Partial discharges Insulators Electrodes Discharges Shape Delamination delamination Gas insulated switchgear (GIS) insulator dielectric performance partial discharge micro-defect crack void |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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