NDLI: Low-Loss High-Performance Base-Drive Unit for SiC BJTs

Content Provider	IEEE Xplore Digital Library
Author	Rabkowski, J. Tolstoy, G. Peftitsis, D. Nee, H.
Copyright Year	1986
Abstract	Driving a silicon carbide bipolar junction transistor is not a trivial issue, if low drive power consumption and short-switching times are desired. A dual-source base-drive unit with a speed-up capacitor consisting of a low- and a high-voltage source is, therefore, proposed in this paper. As a significant base current is required during the conduction state, the driver power consumption is higher than for other semiconductor switches. In the presented solution, the steady-state base current is provided by a low-voltage source and is optimized for low-power losses. On the contrary, a second source with a higher voltage and speed-up capacitor is used in order to improve the switching performance of the device. The proposed driver has experimentally been compared to other standard driver solutions by using a double-pulse circuit and a 2-kW dc/dc boost converter. Switching times of 20 ns at turn-ON and 35 ns at turn-OFF were recorded. Finally, the efficiency of the converter was determined experimentally at various switching frequencies. From power loss measurements at 100-kHz switching frequency using the proposed driver in a 2-kW dc/dc boost converter, it was found that the efficiency was approximately 99.0%. In the same operating point, the driver power consumption was only 0.08% of the rated power.
Sponsorship	IEEE Power Electronics Society
Starting Page	2633
Ending Page	2643
Page Count	11
File Size	1127084
File Format	PDF
ISSN	08858993
Volume Number	27
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Power demand Resistors Transistors Switches Junctions Switching frequency Silicon carbide (SiC) BJT Base-driver circuit base power consumption dc–dc power converters
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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