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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jaekyun Kim Jun-Youn Kim Youngjo Tak Joosung Kim Hyun-Gi Hong Moonseung Yang Suhee Chae Junghoon Park Youngsoo Park U-In Chung |
| Copyright Year | 1980 |
| Abstract | We investigate the reverse leakage characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrate by metal-organic chemical vapor deposition. The reverse leakage characteristics of InGaN/GaN LED on silicon are measured as low as ~10 nA at -5 V and -10 μA at -15 V. Temperature-dependent current-voltage (I-V) measurements of LED devices reveal that the reverse leakage current mechanism is mainly attributed to the field-enhanced thermionic emission, also known as Poole-Frenkel emission, of carriers from deep centers within the space charge region up to ~ -18 V. The analysis of T-I -V curve yields the calculation of the coefficient of the Poole-Frenkel effect (1.12 × 10-4 eV·V-1/2·cm1/2) and activation energies of carriers (~214 meV at -5 V). With further increase of reverse bias, up to -40 V, LED devices exhibit the onset of space-charge-limited leakage current mechanism without any local breakdown. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 1741 |
| Ending Page | 1743 |
| Page Count | 3 |
| File Size | 288697 |
| File Format | |
| ISSN | 07413106 |
| Volume Number | 33 |
| Issue Number | 12 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Light emitting diodes Gallium nitride Silicon Leakage current silicon GaN leakage current light-emitting diodes (LEDs) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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