NDLI: Self-Selective Characteristics of Nanoscale <formula formulatype=inline><tex Notation=TeX>$ hbox{VO}_{x}$</tex></formula> Devices for High-Density ReRAM Applications

Content Provider	IEEE Xplore Digital Library
Author	Myungwoo Son Xinjun Liu Sadaf, S.M. Daeseok Lee Sangsu Park Wootae Lee Seonghyun Kim Jubong Park Jungho Shin Seungjae Jung Moon-Ho Ham Hyunsang Hwang
Copyright Year	1980
Abstract	We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VOx) device simultaneously exhibited self-selective performance and memory switching by electroforming. By using W instead of Pt for the top electrode, memory performance was improved in terms of cycling, pulse endurance, and retention properties attributed to a self-formed WOx/VOx interface. Such a phenomenon in a simple metal-oxide-metal structure provides a good potential for future high-density cross-point memory devices by avoiding the sneak-path problem.
Sponsorship	IEEE Electron Devices Society
Starting Page	718
Ending Page	720
Page Count	3
File Size	513138
File Format	PDF
ISSN	07413106
Volume Number	33
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Nanoscale devices Resistance Materials Metals Performance evaluation Arrays vanadium oxide $(\hbox{VO}_{x})$ nanoscale device Resistive random access memory (ReRAM) selection property
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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