NDLI: Low Noise Avalanche Photodiodes Incorporating a 40 nm AlAsSb Avalanche Region

Content Provider	IEEE Xplore Digital Library
Author	Chee Hing Tan Shiyu Xie Jingjing Xie
Copyright Year	1965
Abstract	A separate absorption and multiplication avalanche photodiode incorporating a 500 nm InGaAs absorption layer, InAlAs bandgap grading/field control layers, an AlAsSb field control layer and a 40 nm AlAsSb multiplication layer was grown and characterized. Responsivity of 436 mA/W was measured at the punch-through voltage. A deviation of Be doping concentration in our AlAsSb field control layer leads higher than intended electric fields in the InGaAs absorption layer and the InAlAs field control layer. Calculation of avalanche gain suggests that the gain in the InGaAs is low and therefore the gain and excess noise characteristics are dominated by impact ionization in the InAlAs field control layer and the AlAsSb multiplication layer. Despite this low excess noise factors corresponding to an effective electron to hole ionization coefficient ratio between 0.1 to 0.15, were measured. This is lower than that from an InAlAs pin diode with a 100 nm avalanche region.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	36
Ending Page	41
Page Count	6
File Size	293303
File Format	PDF
ISSN	00189197
Volume Number	48
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise Indium gallium arsenide Voltage measurement Current measurement Noise measurement Absorption separate absorption and multiplication avalanche photodiode AlAsSb avalanche gain excess noise
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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