NDLI: Porphyrin Self-Assembled Monolayer as a Copper Diffusion Barrier for Advanced CMOS Technologies

Content Provider	IEEE Xplore Digital Library
Author	Khaderbad, M.A. Pandharipande, R. Singh, V. Madhu, S. Ravikanth, M. Ramgopal Rao, V.
Copyright Year	1963
Abstract	This paper investigates properties of zinc porphyrin self-assembled monolayer (SAM) as a Cu diffusion barrier for advanced back-end complementary metal-oxide-semiconductor technologies. The SAM layers are integrated with various inter-layer dielectrics (ILDs) such as HSQ and black diamond (BD). Monolayer formation on ILDs was studied using X-ray photoelectron spectroscopy, atomic force microscopy, contact angle, FTIR, and UV-Vis techniques. Degradation study of the Cu/ILD and Cu/SAM/ILD systems was performed using stress-induced CV and IV at elevated temperatures. Time-of-flight secondary ion mass spectrometry was employed to establish effectiveness of these films as Cu diffusion barriers. The results indicate that SAM films, in addition to improving the ILD's moisture resistance, may help in thinning down the existing barrier layer thickness on the low-k porous ILDs. Effect of SAM layers on the mechanical properties of BD film was studied using nanoindentation.
Sponsorship	IEEE Electron Devices Society
Starting Page	1963
Ending Page	1969
Page Count	7
File Size	987336
File Format	PDF
ISSN	00189383
Volume Number	59
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Silicon Surface treatment Stress Dielectrics Surface morphology self-assembled monolayer (SAM) Copper interconnect diffusion barrier low- $k$ interlayer dielectric (ILD) porphyrin
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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