NDLI: Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel

Content Provider	IEEE Xplore Digital Library
Author	Haixia Da Kai-Tak Lam Samudra, G. Sai-Kong Chin Gengchiau Liang
Copyright Year	1963
Abstract	We present a computational study of the device performance of graphene nanoribbon tunneling field-effect transistors (TFETs) with a heterogeneous channel. By varying the length and the energy bandgap (EG) of the heterogeneous region, the on- and off-state currents (I_ON and I_OFF) can be effectively optimized independently. Both semiconducting and semimetallic heterogeneous regions are studied to understand the effects of EG engineering on device behaviors. In addition, the effect of gate coverage (GC) over the heterogeneous region is also investigated. We found that device performance is greatly affected by the positioning of the gate to modify the region where band-to-band tunneling occurs. For a given I_ON/I_OFF of eight orders, our results show that, for the semiconducting heterojunction, a higher I_ON can be obtained by having the gate partially covering the heterogeneous region. This is due to a combination of a short tunneling length and resonant states, which leads to an increase in carrier concentration for the tunneling mechanism. On the other hand, for the semimetallic case, a similar I_ON/I_OFF is only attainable when the heterogeneous region is not covered by the gate. A large I_OFF is observed for even small GC due to the valence electrons from the source traveling to the conduction bands of the semimetallic region, enhancing the carrier transport toward the drain. Our study highlights the device design consideration required when optimizing the device performance of heterojunction TFETs.
Sponsorship	IEEE Electron Devices Society
Starting Page	1454
Ending Page	1461
Page Count	8
File Size	779586
File Format	PDF
ISSN	00189383
Volume Number	59
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling Logic gates Current density Performance evaluation FETs Chemicals Energy states tunneling transistors Graphene heterojunction
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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