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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lan Gao Dongdong Wang Jian Qiu Kefu Liu |
| Copyright Year | 1994 |
| Abstract | A newly developed bipolar high voltage adder is proposed for generating fast narrow pulses. The new circuit topology enables the use of typical half-bridge semiconductor structures on the basis of conventional unipolar all-solid-state pulse adder. Magnetic ring transformers were employed for isolating the charge loop from the high-voltage pulse discharge loop, which simplified the isolation arrangement. Certain measures were implemented to resolve the EMI caused by the pulse adder arrangement. A laboratory prototype was assembled with 8 stages and each stage was made of 800 V MOSFETs. The modulator operating at 21 kHz repetition rate gives 2 kV bipolar pulses, with 200 ns positive/negative pulse widths, 37 ns rise time, 50 ns fall time, and 40 ns relaxation time into a 50 Ω resistive load. The adopted design is an all-solid-state approach with a simple control method, long maintenance-free lifetime, and high reliability. |
| Sponsorship | National Natural Science Foundation of China (NSFC) Region Centre Ville de Tours Conseil General D'Indre et Loire ABB IEEE Sandia National Laboratories TOSHIBA |
| File Size | 717455 |
| File Format | |
| ISSN | 10709878 |
| Volume Number | 18 |
| Issue Number | 3 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-06-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Capacitors MOSFETs Adders Logic gates Power transformer insulation Discharges Power supplies drive circuit All-solid-state pulse adder bipolar MOSFET |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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