NDLI: An Effective Approach for Restraining Galvanic Corrosion of Polycrystalline Silicon by Hydrofluoric-Acid-Based Solutions

Content Provider	IEEE Xplore Digital Library
Author	Yunfei Liu Jing Xie Mingliang Zhang Jinling Yang Fuhua Yang
Copyright Year	1992
Abstract	This paper presents an effective method to restrain galvanic corrosion of polycrystalline silicon (polysilicon) that is electrically coupled with noble metals of microelectromechanical systems (MEMS) devices by hydrofluoric-acid (HF)-based solutions. A titanium (Ti) redox sacrificial layer is added on the noble-metal layer and then covered by photoresist. Benefiting from the lower electrochemical potential of Ti than that of polysilicon in HF-based solutions, Ti is preferentially corroded in HF-based solutions, and the polysilicon is well protected. The thickness of the Ti layer should be optimized for effectively suppressing galvanic corrosion of polysilicon; a 50-nm-thick Ti film is able to preserve the resistivities of polysilicon unchanged in concentrated HF (49% HF by weight percent) solution for 1 h. This approach is simple and compatible with MEMS batch-fabrication technology and provides a solution for the longstanding issue in microfabrication technology, i.e., galvanic attack to the polysilicon structural layer by HF-based solutions.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	460
Ending Page	465
Page Count	6
File Size	597456
File Format	PDF
ISSN	10577157
Volume Number	20
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hafnium Etching Corrosion Silicon Conductivity Micromechanical devices titanium (Ti) redox sacrificial layer Galvanic corrosion polysilicon resistivity
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Effect of Galvanic Corrosion-Induced Roughness on Sidewall Adhesion in Polycrystalline Silicon Microelectromechanical Systems

Anodic oxidation during MEMS processing of silicon and polysilicon: native oxides can be thicker than you think

Mechanical Effects of Galvanic Corrosion on Structural Polysilicon

Surface micromachining of polycrystalline SiC films using microfabricated molds of SiO/sub 2/ and polysilicon

Ultraviolet-Assisted Release of Microelectromechanical Systems From Polyimide Sacrificial Layer

Porous polycrystalline silicon: a new material for MEMS

Catalyst-referred etching of silicon

Optimization of Reactive Ion Etching of Polycrystalline Diamond for MEMS Applications

MEMS Composite Porous Silicon/Polysilicon Cantilever Sensor for Enhanced Triglycerides Biosensing

An Effective Approach for Restraining Galvanic Corrosion of Polycrystalline Silicon by Hydrofluoric-Acid-Based Solutions

Similar Documents

Effect of Galvanic Corrosion-Induced Roughness on Sidewall Adhesion in Polycrystalline Silicon Microelectromechanical Systems

Anodic oxidation during MEMS processing of silicon and polysilicon: native oxides can be thicker than you think

Mechanical Effects of Galvanic Corrosion on Structural Polysilicon

Surface micromachining of polycrystalline SiC films using microfabricated molds of SiO/sub 2/ and polysilicon

Ultraviolet-Assisted Release of Microelectromechanical Systems From Polyimide Sacrificial Layer

Porous polycrystalline silicon: a new material for MEMS

Catalyst-referred etching of silicon

Optimization of Reactive Ion Etching of Polycrystalline Diamond for MEMS Applications

MEMS Composite Porous Silicon/Polysilicon Cantilever Sensor for Enhanced Triglycerides Biosensing

An Effective Approach for Restraining Galvanic Corrosion of Polycrystalline Silicon by Hydrofluoric-Acid-Based Solutions