NDLI: Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire

Content Provider	IEEE Xplore Digital Library
Author	Jang, C.H. Sheu, J.K. Chang, S.J. Lee, M.L. Yang, C.C. Tu, S.J. Huang, F.W. Hsu, C.K.
Copyright Year	1989
Abstract	The effect of growth pressure of underlying undoped GaN(u-GaN) layer on the electrical properties of GaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSS) is evaluated. The electrostatic discharge (ESD) endurance voltages could increase from 4000 to 7000 V when the growth pressure of u-GaN layers is increased from 100 to 500 torr, while the forward voltages and light output powers remain almost the same. Poor ESD endurance ability could be attributed to the underlying GaN layer grown under relative low pressure, which leads to significant surface pits. This could be further attributed to the imperfect coalescence of crystal planes above the convex sapphire patterns. The pits are associated with TDs behaving as a leakage path to degrade electrical performance.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	968
Ending Page	970
Page Count	3
File Size	319410
File Format	PDF
ISSN	10411135
Volume Number	23
Issue Number	14
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Electrostatic discharge Gallium nitride Substrates Power generation Photonics Epitaxial layers patterned sapphire substrates (PSS) Electrostatic discharge (ESD) GaN
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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