NDLI: Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector

Content Provider	IEEE Xplore Digital Library
Author	Bo-Siao Cheng Ching-Hsueh Chiu Ming-Hua Lo Yun-Lin Wu Hao-Chung Kuo Tien-Chang Lu Yuh-Jen Cheng Shing-Chung Wang Kuo-Jui Huang
Copyright Year	1989
Abstract	We demonstrate the output power enhancement of ultraviolet light-emitting diodes (UVLEDs) by epitaxial lateral over growth (ELOG) on a distributed Bragg reflector (DBR) patterned substrate. The patterned DBR mesas are used as ELOG masks to improve material quality as well as reflectors to enhance the light output coupling. Compared with the conventional UVLEDs, the surface pit density of UVLEDs at regions right above embedded patterned DBR were reduced from 2.5 × 10⁶ to 1.6 × 10⁶ cm^-2. The improved light extraction efficiency is verified by ray tracing simulation. The luminous intensity of this novel structure is enhanced by 75% compared to that of reference UVLED structure at the wavelength 390 nm.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	642
Ending Page	644
Page Count	3
File Size	867776
File Format	PDF
ISSN	10411135
Volume Number	23
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Distributed Bragg reflectors Light emitting diodes Gallium nitride Reflectivity Epitaxial growth Substrates Power generation ultraviolet light-emitting diodes (UVLEDs) Distributed Bragg reflector (DBR)
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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