NDLI: A GaN Electromechanical Tunable Grating on Si Substrate

Content Provider	IEEE Xplore Digital Library
Author	Sameshima, H. Tanae, T. Hane, K.
Copyright Year	1989
Abstract	An electromechanical tunable grating was fabricated by micromachining a GaN crystal grown on a Si substrate. The tunable grating consisted of an expandable freestanding grating and an electrostatic comb-drive actuator. In order to compensate the residual stress of the GaN crystal grown on the Si substrate, crystallization stress of an HfO₂ layer deposited on the GaN crystal was utilized. The freestanding GaN structure of the grating was fabricated by etching the Si substrate with XeF₂ gas. The freestanding grating consisted of twenty-four 12-μm-long and 85-nm-wide grating lines with a 720-nm period. By applying a voltage of 140 V, the grating was expanded by 0.6 μm to change the period by 3.5%. The proposed tunable grating can be used for monolithic integration of a GaN light source and a micro-spectrometer.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	281
Ending Page	283
Page Count	3
File Size	572139
File Format	PDF
ISSN	10411135
Volume Number	23
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Gratings Silicon Actuators Springs Crystals Substrates tunable filters Microelectromechanical devices optical device fabrication optical grating
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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