NDLI: Thermal stress and fracture in shear-constrained semiconductor device structures

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Year : 1962 Volume : 9

The multiple-beam klystron

Analysis of a frequency-modulated reflex klystron with minimum incidental amplitude modulation

Phase focusing in linear-beam devices

Glow discharge indicator tube for small signals

Low-voltage mercury-alkali metal arc

A microspot tube with very high resolution

An investigation of the magnetic transverse waves on an electron beam

Noise performance of transistors

Thermal stress and fracture in shear-constrained semiconductor device structures

Low-frequency noise figure and its application to the measurement of certain transistor parameters

Noise and the potential minimum at high frequencies

Year : 1961 Volume : 8

Year : 1960 Volume : 7

Year : 1959 Volume : 6

Year : 1958 Volume : 5

Year : 1957 Volume : 4

Year : 1956 Volume : 3

Year : 1955 Volume : 2

Thermal stress and fracture in shear-constrained semiconductor device structures

Content Provider	IEEE Xplore Digital Library
Author	Taylor, T.C. Yuan, F.L.
Copyright Year	1955
Abstract	The construction of semiconductor devices, as well as other electron devices, often requires the utilization of brittle materials, such as the semiconductor itself, as part of a larger structure. Thermal stress, caused by cooling from high temperature bonding operations, can cause fracture of the brittle part, due to thermal expansivity mismatch with other parts of the structure. This paper considers a widely used type of bond, consisting of a nonpenetrating butt-joint, wherein the parts develop thermal stresses by reason of shear constraint in a solder layer. This type of joint is therefore called a shear-constrained bond. A one-dimensional, elastic analytical model is presented, which predicts the location and orientation of the principal tensile stress in a shear-constrained brittle strip. The tensile stress required for brittle fracture is shown to be induced, primarily, by shear tractions in the solder layer which are applied to one face of the strip. Extended to a real structure, the model would predict the highest tensile stress at the outer periphery of a bond, and oriented at 45° with the plane of the bond interface. This prediction is found to be in agreement with the bulk of fracture experience in shear-constrained semiconductors.
Starting Page	303
Ending Page	308
Page Count	6
File Size	738303
File Format	PDF
ISSN	00962430
Volume Number	9
Issue Number	3
Language	English
Publisher Date	1962-05-01
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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