NDLI: Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress

Content Provider	IEEE Xplore Digital Library
Author	Congyong Zhu Kayis, C. Mo Wu Xing Li Fan Zhang Avrutin, V. Ozgur, U. Morkoc, H.
Copyright Year	1980
Abstract	We report on the evolution of AlGaN/GaN-based heterojunction field-effect transistor (HFET) operation under high-electric-field stress. Specifically, a 10 ~ 15 dB decrease in the flicker noise is observed after stress in contrast with what has been nominally observed and reported in the literature in the realm of direct-current characteristics. Gate lag measurements revealed a trap state with an activation energy of 0.20 eV in the pristine devices, which manifests itself as a generation-recombination peak in the flicker noise spectrum. This trap state becomes undetectable in gate lag and noise measurements after high-field stress. Analysis shows that the phenomena observed are consistent with the change of surface charge profile during high-electric-field stress.
Sponsorship	IEEE Electron Devices Society
Starting Page	1513
Ending Page	1515
Page Count	3
File Size	437735
File Format	PDF
ISSN	07413106
Volume Number	32
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Stress HEMTs MODFETs Aluminum gallium nitride Gallium nitride Noise traps AlGaN/GaN gate lag generation–recombination (G–R) heterostructure field-effect transistors (HFETs) hot-electron stress noise measurement reliability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Modeling of the Gate Leakage Current in AlGaN/GaN HFETs

Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations

Role of Transport During Transient Phenomena in AlGaN/GaN Heterostructure FETs

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

Impact of Epi-Layer Quality on Reliability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Low-Frequency Noise Measurements of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

Fin- and Island-Isolated AlGaN/GaN HFETs

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress

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