NDLI: Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-<formula formulatype=inline><tex Notation=TeX>$k$</tex></formula> Dielectric/Metal Gate

Content Provider	IEEE Xplore Digital Library
Author	Hyuk-Min Kwon In-Shik Han Jung-Deuk Bok Sang-Uk Park Yi-Jung Jung Ga-Won Lee Yi-Sun Chung Jung-Hwan Lee Chang Yong Kang Kirsch, P. Jammy, R. Hi-Deok Lee
Copyright Year	1980
Abstract	The behavior of I_D random telegraph signal (RTS) noise of a p-MOSFET with an advanced gate stack of HfO₂/TaN is experimentally investigated and discussed. The I_D-RTS noise is evaluated on a wafer level (100 sites) for statistical evaluation. The observed ratio of I_D-RTS noise on a wafer is quite similar to that of a p-MOSFET with the conventional plasma-SiON dielectric, which means that the noise distribution on a wafer level is independent of the gate oxide structure and/or material. However, the relative magnitude of change of the drain current to the applied current (ΔI_D/I_D) of the p-MOSFETs with high-k (HK) dielectrics is greater than that of p-MOSFETs with conventional plasma-SiON dielectrics by about six times due to the greater number of preexisting bulk traps in the HK dielectric. Therefore, I_D-RTS noise and its associated 1/f noise can present a serious issue to the CMOSFET with an advanced HK dielectric for low-power analog and mixed-signal applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	686
Ending Page	688
Page Count	3
File Size	471204
File Format	PDF
ISSN	07413106
Volume Number	32
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise Dielectrics Logic gates MOSFET circuits MOSFETs Noise measurement Time domain analysis random telegraph signal (RTS) noise Hafnium oxide ($\hbox{HfO}_{2}$) high-$k$ (HK) dielectric low-frequency noise
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Evidence for a Very Small Tunneling Effective Mass (0.03 $m_{0}$) in MOSFET High-$k$ (HfSiON) Gate Dielectrics

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Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-$k$ Dielectric/Metal Gate

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