NDLI: Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors and Its Application to AM-OLEDs

Content Provider	IEEE Xplore Digital Library
Author	Gwanghyeon Baek Abe, K. Kuo, A. Kumomi, H. Kanicki, J.
Copyright Year	1963
Abstract	The electrical characteristics and stability of dual-gate (DG) coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) on glass substrates are described herein. In this device structure, both top gate (TG) and bottom gate are defined by lithography, allowing independent biasing when adjacent TFTs are present. The DG a-IGZO TFT demonstrates excellent electrical performance with subthreshold swing (SS) of 99 mV/dec, field-effect mobility of 15.1 , and on- off current ratio of . By applying various bias voltages on the TG electrode, it is found that the TFT threshold voltage can be controlled without any change of the SS and off current. Under conditions of negative bias temperature stress (BTS), the transfer curves of the TFT exhibit negligible shifts after 10 000 s. Larger shifts are observed under conditions of a positive BTS. Finally, the application of this DG device to active-matrix organic light-emitting displays is suggested.
Sponsorship	IEEE Electron Devices Society
Starting Page	4344
Ending Page	4353
Page Count	10
File Size	769858
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Logic gates Electrodes Insulators Stress Threshold voltage Capacitance thin-film transistor (TFT) Active-matrix organic light-emitting display (AM-OLED) amorphous indium–gallium–zinc–oxide (a-IGZO) coplanar homojuction dual gate (DG)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors and Its Application to AM-OLEDs

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P-11: Electrical Properties and Stability of Dual-Gate Coplanar Homojunction Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor

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P-11 : Electrical Properties and Stability of Dual-Gate Coplanar Homojunction Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor

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