NDLI: Influence of Etching Potential on Convex Corner Anisotropic Etching in TMAH Solution

Content Provider	IEEE Xplore Digital Library
Author	Bagolini, A. Faes, A. Decarli, M.
Copyright Year	1992
Abstract	Anisotropic etching with tetramethylammonium hydroxide (TMAH) water solutions is a simple and CMOS-compatible way to obtain geometrical patterns in single-crystal silicon wafers. The fabrication of trenches and other features is although limited by the need to compensate convex corners which tend to be etched very fast. Such compensation produces footings at the bottom edge of the etched walls, yielding a complex and scarcely predictable geometry which might affect the performance of devices in applications such as fluidics. The etch rates for different crystal planes are affected not only by the TMAH concentration and etching temperature but also by the etching reaction potential. In this work, shallow TMAH etching of single-crystal silicon wafers in 25-wt% TMAH at 90°C is examined up to a depth of 30 m, at potentials ranging from -1 to -2 V, using etching masks to obtain compensated convex corners. Identification of the sidewalls as {311} planes is performed by angle measurement on SEM and optical images. The etch ratio of the (100) crystal plane versus both (311) and (111) planes is measured at the various potentials. Morphological differences between cathodic and anodic potentials with respect to the open-circuit potential (OCP) are examined: Cathodic etching (between OCP and -2 V) yields footing patterns and a pronounced undercut, while anodic etching (between -1 V and OCP) produces smooth sidewalls with no footing, an increased (100)/(311) etch ratio, and a decreased (100)/(111) etch ratio.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	1254
Ending Page	1259
Page Count	6
File Size	458278
File Format	PDF
ISSN	10577157
Volume Number	19
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Silicon Crystals Geometry Anisotropic magnetoresistance Electric potential IEEE Potentials tetramethylammonium hydroxide (TMAH) Corner compensation crystal planes micromachining
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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