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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Patil, S.K. Çelik-Butler, Z. Butler, D.P. |
| Copyright Year | 2002 |
| Abstract | Nanocrystalline piezoresistive polysilicon films were obtained at low temperatures by aluminum-induced crystallization (AIC). The films exhibited granular structure with good polycrystalline properties. A piezoresistive pressure sensor was fabricated on a polyimide substrate, in a Wheatstone bridge configuration comprising two passive resistors and two active piezoresistors made of polysilicon films obtained by AIC. The resistors showed linear I-V characteristics with typical resistance values between 15 and 30 kΩ . Atomic force microscopy was used in contact mode to study the response of the pressure sensor with applied pressure in the 2-19 kPa range. For the higher range of 450 kPa-2 MPa, a load-cell with a nanopositioner was utilized. The pressure-sensor sensitivity was measured to be 41.12 and 5.02 mV/MPa, respectively, for these ranges, when the Wheatstone bridge was bias at 1 V. |
| Sponsorship | IEEE Nanotechnology Council |
| Starting Page | 640 |
| Ending Page | 646 |
| Page Count | 7 |
| File Size | 428362 |
| File Format | |
| ISSN | 1536125X |
| Volume Number | 9 |
| Issue Number | 5 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-09-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Piezoresistance Crystallization Sensor phenomena and characterization Bridge circuits Resistors Atomic force microscopy Temperature sensors Polyimides Substrates Piezoresistive devices transducers Aluminum crystal growth piezoresistive devices silicon |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications |
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