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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yung Hsun Lin Liu, Y.S. Liu, C.Y. |
| Copyright Year | 1989 |
| Abstract | With Ti doping, the transmittance of indium-tin-oxide (ITO) thin film is greatly enhanced in near the ultraviolet (UV) range. After annealing at 500 °C in vacuum, the transmittance of Ti-doped ITO (Ti : ITO) thin film at 380 nm is larger than that of pure ITO thin film by 22%. And, the resistivity of annealed Ti : ITO thin film is equivalent with that of ITO thin film (4.248×10-4 Ω·cm). Using Ti : ITO as TCL, the light output power of UV light-emitting diode (LED) is enhanced by 52.1%, compared to UV-LED (380 nm) with an ITO transparent conducting layer. |
| Sponsorship | IEEE Lasers and Electro-Optics Society |
| Starting Page | 1443 |
| Ending Page | 1445 |
| Page Count | 3 |
| File Size | 295985 |
| File Format | |
| ISSN | 10411135 |
| Volume Number | 22 |
| Issue Number | 19 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-10-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium tin oxide Transistors Conductivity Annealing Conducting materials Light emitting diodes Substrates Doping Power generation Sputtering ultraviolet (UV) sources Contact resistance indium–tin–oxide (ITO) light-emitting diodes (LEDs) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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