NDLI: Comprehensive Compact Models for the Circuit Simulation of Multichip Power Modules

Content Provider	IEEE Xplore Digital Library
Author	Castellazzi, A.
Copyright Year	1986
Abstract	This paper proposes the model development of a packaged semiconductor power module, for use in a circuit simulation environment. Focusing on railway traction applications, it considers a state-of-the-art 6.5 kV insulated gate bipolar transistor (IGBT) module, taking into account the antiparallel connection of IGBTs and free-wheeling diodes, and including all main electrothermal and electromagnetic effects associated with the multichip structure. The description of semiconductor physics is coupled with self-heating effects; electromagnetic phenomena associated with the packaging, layout, and interconnections are also taken into account. To optimize the compromise between accuracy and computational effort, the device models are based on a mixed physical and behavioral description, and are scalable to be representative of a desired number of parallel devices and to allow for the introduction of parasitic elements, as required. Electromagnetic effects are modeled by means of equivalent lumped elements, extracted by numerical simulation of an accurate 3-D structural assembly model. The description of transient thermal phenomena relies on a finite-difference approach that considers the use of both essentially 1-D lumped equivalent models and fully 3-D distributed description. The model is validated statically and dynamically, against both data-sheet information and measurements; a selection of simulation examples demonstrates its usefulness and versatility. Although developed for a specific application scenario, the proposed approach is of general validity.
Sponsorship	IEEE Power Electronics Society
Starting Page	1251
Ending Page	1264
Page Count	14
File Size	1395598
File Format	PDF
ISSN	08858993
Volume Number	25
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Circuit simulation Multichip modules Insulated gate bipolar transistors Semiconductor device packaging Electromagnetic coupling Electromagnetic modeling Rail transportation Semiconductor diodes Electrothermal effects Physics simulation Diodes electromagnetic effects electrothermal effects insulated gate bipolar transistor (IGBT) modeling power semiconductor devices
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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