NDLI: Blue Light-Emitting Diodes With an Embedded Native Gallium Oxide Pattern Structure

Content Provider	IEEE Xplore Digital Library
Author	Chia-Feng Lin Kuei-Ting Chen Kun-Pin Huang
Copyright Year	1980
Abstract	InGaN-based light emitting diodes (LEDs) were embedded by an insulated disk-array gallium oxide (Ga₂O₃) pattern structure that was formed through a photoelectrochemical oxidation process on a GaN layer. A 4-μm-diameter native Ga₂O₃ pattern with a top air-void structure was observed in the lower undoped GaN layer acting as a lateral overgrowth mask and as a light scattering center. In the patterned-Ga₂ O₃ LED structure (PGO-LED), the light output power had an approximate 28% enhancement when compared to a conventional LED at 20 mA. In the PGO-LED structure, the lower piezoelectric field and the slightly higher internal quantum efficiency in the InGaN active layers were both measured through a bias-dependent and temperature-dependent microphotoluminescence measurement. The LED structure consists of Ga₂O₃ disk-array patterns with top air-void structures that increase external quantum efficiency for nitride-based LED applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	1431
Ending Page	1433
Page Count	3
File Size	387573
File Format	PDF
ISSN	07413106
Volume Number	31
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Light emitting diodes Temperature measurement Epitaxial growth Power generation Oxidation Voltage measurement Semiconductor device measurement semiconductor device measurements Light-emitting diodes (LEDs) optical device fabrication oxidation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

InGaN Light-Emitting Diodes With the Inverted Cone-Shaped Pillar Structures

InGaN-Based Light-Emitting Diodes With Nanoporous Microhole Structures

GaN-Based LEDs With AZO:Y Upper Contact

Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs

GaN-Based LEDs With a Chirped Multiquantum Barrier Structure

Thermal Analysis of High-Power Multichip COB Light-Emitting Diodes With Different Chip Sizes

Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces

Nitride-Based Light Emitting Diodes With Textured Sidewalls and Pillar Waveguides

Sub-Micron Lithography Using InGaN Micro-LEDs: Mask-Free Fabrication of LED Arrays

Blue Light-Emitting Diodes With an Embedded Native Gallium Oxide Pattern Structure

Similar Documents

InGaN Light-Emitting Diodes With the Inverted Cone-Shaped Pillar Structures

InGaN-Based Light-Emitting Diodes With Nanoporous Microhole Structures

GaN-Based LEDs With AZO:Y Upper Contact

Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs

GaN-Based LEDs With a Chirped Multiquantum Barrier Structure

Thermal Analysis of High-Power Multichip COB Light-Emitting Diodes With Different Chip Sizes

Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces

Nitride-Based Light Emitting Diodes With Textured Sidewalls and Pillar Waveguides

Sub-Micron Lithography Using InGaN Micro-LEDs: Mask-Free Fabrication of LED Arrays

Blue Light-Emitting Diodes With an Embedded Native Gallium Oxide Pattern Structure