NDLI: High-Performance Pentacene Thin-Film Transistors Fabricated by Organic Vapor-Jet Printing

Content Provider	IEEE Xplore Digital Library
Author	Changhun Yun Hanul Moon Hyun Wook Kang Mincheol Kim Hyung Jin Sung Seunghyup Yoo
Copyright Year	1980
Abstract	Organic vapor-jet printing, a maskless direct printing method, is used to fabricate high-performance pentacene thin-film transistors. By combining the optimal carrier gas temperature and the surface treatment of gate dielectrics, a mobility of 0.46 (±0.03) cm² V^-1 s^-1 and an on-off ratio greater than 10⁷ are achieved. Morphological analyses indicate that the relatively high carrier gas temperature and low surface energy of the dielectric surface are the keys in achieving the level of performance comparable to that of devices based on conventional technologies.
Sponsorship	IEEE Electron Devices Society
Starting Page	1305
Ending Page	1307
Page Count	3
File Size	442775
File Format	PDF
ISSN	07413106
Volume Number	31
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pentacene Printing Surface treatment Dielectrics Organic thin film transistors thin-film growth Organic thin-film transistor (OTFT) organic vapor-jet printing (OVJP) pentacene
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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High-Performance Pentacene Thin-Film Transistors Fabricated by Organic Vapor-Jet Printing