NDLI: Thermal Stability of Nickel Germanide Formed on Tensile-Strained Ge Epilayer on Si Substrate

Content Provider	IEEE Xplore Digital Library
Author	Mengrao Tang Wei Huang Cheng Li Hongkai Lai Songyan Chen
Copyright Year	1980
Abstract	The thermal stability of a nickel germanide film formed on a tensile-strained Ge epilayer on a silicon substrate with a low-temperature Si_0.77Ge_0.23 (50-nm)/Ge (50-nm) buffer is investigated. A record temperature of 700°C for the stability of sheet resistance of nickel germanide is reported, which is increased by about 150°C compared to that on bulk Ge and comparable to the temperature for nickel silicide on the Si substrate. The improvement of the thermal stability is demonstrated due to the delay of the agglomeration of the nickel germanide film on Ge-on-Si, which is proposed to be attributed to the increase of the tensile strain in the Ge epilayer during thermal annealing due to the thermal mismatch between Si and Ge.
Sponsorship	IEEE Electron Devices Society
Starting Page	863
Ending Page	865
Page Count	3
File Size	307272
File Format	PDF
ISSN	07413106
Volume Number	31
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal stability Nickel Substrates Semiconductor films Temperature Silicon Silicides Delay Tensile strain Annealing nickel alloys Conductivity measurement germanium
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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