NDLI: 100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With <formula formulatype=inline><tex Notation=TeX>${F}_{ rm T} = hbox{144} hbox{GHz}$</tex></formula>

Content Provider	IEEE Xplore Digital Library
Author	Haifeng Sun Alt, A.R. Benedickter, H. Feltin, E. Carlin, J.-F. Gonschorek, M. Grandjean, N. Bolognesi, C.R.
Copyright Year	1980
Abstract	One-hundred-nanometer-gate (Al,In)N/GaN high-electron-mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at V_GS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequency as high as f_T = 144 GHz, which is the highest so far reported for any (Al,In)N/GaN-based HEMT. This f_T matches the best published values that we could find for 100-nm-gate (Al,Ga)N/GaN HEMTs, thus closing the cutoff frequency gap between (Al,In)N/GaN and (Al,Ga)N/GaN HEMTs. Additionally, similar devices grown on (111) high-resistivity silicon show a peak f_T of 113 GHz, also setting a new performance benchmark for (Al,In)N/GaN HEMTs on silicon. Our findings indicate significant performance advantages for (Al,In)N/GaN HEMTs fabricated on SiC substrates. The improved performance for devices grown on SiC is derived from the superior transport properties of (Al,In)N/GaN 2DEGs grown on that substrate.
Sponsorship	IEEE Electron Devices Society
Starting Page	293
Ending Page	295
Page Count	3
File Size	406857
File Format	PDF
ISSN	07413106
Volume Number	31
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride HEMTs MODFETs Silicon carbide Transconductance Cutoff frequency Sun Current density Bandwidth Millimeter wave transistors millimeter-wave transistors AlInN/GaN high-electron-mobility transistor (HEMT)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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