NDLI: Submicron Etched Beam Splitters Based on Total Internal Reflection in GaAs

Content Provider	IEEE Xplore Digital Library
Author	Byungchae Kim Dagli, N.
Copyright Year	1983
Abstract	Submicron etched beam splitters are designed, fabricated and characterized in Al_0.9Ga_0.1As-GaAs waveguides. Beam splitter transmission and reflection characteristics show clear dependence on gap dimension and angle of incidence. It is possible to obtain 8 to 30% power transmission by adjusting the gap dimension and angle of incidence. The experimental results agree well with three-dimensional (3-D) finite difference time domain (FDTD) simulations. The effect of imperfections, mainly the slope of etched sidewalls and variations in etch depth are investigated using 3-D FDTD. Design guidelines for low loss etched beam splitters are also given.
Sponsorship	IEEE Lasers and Electro-Optics Society Optical Society of America
Starting Page	1938
Ending Page	1943
Page Count	6
File Size	444747
File Format	PDF
ISSN	07338724
Volume Number	28
Issue Number	13
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Optical reflection Optical waveguides Finite difference methods Mirrors Gallium arsenide Couplers Time domain analysis Optical losses Optical scattering weakly confined waveguide Beam splitter integrated optics total internal reflection
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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