NDLI: Device and Architecture Outlook for Beyond CMOS Switches

Content Provider	IEEE Xplore Digital Library
Author	Bernstein, K. Cavin, R.K. Porod, W. Seabaugh, A. Welser, J.
Copyright Year	1963
Abstract	Sooner or later, fundamental limitations destine complementary metal-oxide-semiconductor (CMOS) scaling to a conclusion. A number of unique switches have been proposed as replacements, many of which do not even use electron charge as the state variable. Instead, these nanoscale structures pass tokens in the spin, excitonic, photonic, magnetic, quantum, or even heat domains. Emergent physical behaviors and idiosyncrasies of these novel switches can complement the execution of specific algorithms or workloads by enabling quite unique architectures. Ultimately, exploiting these unusual responses will extend throughput in high-performance computing. Alternative tokens also require new transport mechanisms to replace the conventional chip wire interconnect schemes of charge-based computing. New intrinsic limits to scaling in post-CMOS technologies are likely to be bounded ultimately by thermodynamic entropy and Shannon noise.
Sponsorship	IEEE Publication
Starting Page	2169
Ending Page	2184
Page Count	16
File Size	3055034
File Format	PDF
ISSN	00189219
Volume Number	98
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS integrated circuits Computer architecture FETs Performance evaluation Logic gates CMOS technology Magnetic domains tunneling Nanoarchitectures nanomagnet logic post-complementary metal–oxide–semiconductor (CMOS) pseudospin quantum-dot cellular-automata architectures (QCAs) quantum-dot cellular automata spin tunnel field-effect transistor (TFET)
Content Type	Text
Resource Type	Article
Subject	Computer Science Electrical and Electronic Engineering

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