NDLI: Thickness and Temperature Dependence of Dielectric Reliability Characteristics in Cerium Dioxide Thin Film

Content Provider	IEEE Xplore Digital Library
Author	Fu-Chien Chiu
Copyright Year	1963
Abstract	The thickness and temperature dependence of the CeO₂ dielectric reliability characteristics of metal-oxide-semiconductor capacitors is studied. The dielectric breakdown strength (E_bd) of CeO₂ thin films decreases with increasing temperature. The Weibull slope of the charge-to-breakdown (Q_bd) statistics is a function of the dielectric thickness. However, it is independent of temperature. In this work, the Weibull slope was calculated by the method of maximum-likelihood estimation. At room temperature, the Weibull slopes with thicknesses of 7.3, 11.2, and 13.1 nm are about 1.57, 3.28, and 4.41, respectively. According to a cell-based analytic model, the effectively stress-induced defect size (a₀) in CeO₂ in the breakdown event was determined to be about 1-2 nm. Therefore, the capture cross section of the generated defects is on the order of 10^-14 cm², which indicated that the defects were neutral centers. In addition, a comparison with SiO₂- and HfO₂-gated capacitors was made.
Sponsorship	IEEE Electron Devices Society
Starting Page	2719
Ending Page	2725
Page Count	7
File Size	660155
File Format	PDF
ISSN	00189383
Volume Number	57
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectrics Temperature measurement Dielectric breakdown Logic gates Reliability Stress Weibull slope $\hbox{CeO}_{2}$ dielectric reliability stress-induced defect size
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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