NDLI: AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

Content Provider	IEEE Xplore Digital Library
Author	Gerbedoen, J.-C. Soltani, A. Joblot, S. De Jaeger, J.-C. Gaquiere, C. Cordier, Y. Semond, F.
Copyright Year	1963
Abstract	AlGaN/GaN High Electron Mobility Transistors (HEMT) on a (001)-oriented silicon (Si) substrate are fabricated. The device with a gate length of 300 nm and a total gate periphery of 300 μm exhibits a maximum dc drain current density of 600 mA/mm at V_GS = 0 V with an extrinsic transconductance (g_m) of about 200 mS/mm. An extrinsic current gain cutoff frequency (f_t) of 37 GHz and a maximum oscillation frequency (f_max) of 55 GHz are deduced from S-parameter measurements. At 10 GHz, an output power density of 2.9 W/mm associated to a power-added efficiency (PAE) of 20% and a linear gain of 7 dB are obtained at V_DS = 30 V and V_GS = -2 V. To our knowledge, these power results represent the highest output power density ever reported at this frequency on GaN HEMT grown on (001) Si substrate.
Sponsorship	IEEE Electron Devices Society
Starting Page	1497
Ending Page	1503
Page Count	7
File Size	481806
File Format	PDF
ISSN	00189383
Volume Number	57
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Silicon Substrates Logic gates MODFETs HEMTs Stress (001) Si AlGaN/GaN High Electron Mobility Transistor (HEMT) microwave power
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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