NDLI: Effective Surface Passivation by Novel <formula formulatype=inline><tex Notation=TeX>$hbox{SiH}_{4}$ </tex></formula>–<formula formulatype=inline><tex Notation=TeX>$hbox{NH}_{3}$</tex></formula> Treatment and BTI Characteristics on Interface-Engineered High-Mobility <formula formulatype=inline><tex Notation=TeX>$hbox{HfO}

Content Provider	IEEE Xplore Digital Library
Author	Ruilong Xie Thanh Hoa Phung Mingbin Yu Chunxiang Zhu
Copyright Year	1963
Abstract	A novel surface passivation technique using silicon nitride (SN) by - treatment has been demonstrated on -gated Ge pMOSFETs. It is found that ultrathin SN passivation is more effective to suppress the Ge out diffusion than ultrathin Si passivation. Improved interface quality and device performance were achieved for the device with the SN passivation. Fluorine (F) incorporation by postgate treatment was also implemented to further enhance the performance. Furthermore, bias temperature instability (BTI) characteristics were systematically investigated on interface engineered (Si-, SN-, or -passivated) Ge pMOSFETs by both conventional dc - and fast pulse measurement. The impact of thickness and postgate treatment processes (F incorporation) on BTI and device performance was also studied, and it is found that BTI and device performance can be improved by reducing the thickness or incorporating F.
Sponsorship	IEEE Electron Devices Society
Starting Page	1399
Ending Page	1407
Page Count	9
File Size	826019
File Format	PDF
ISSN	00189383
Volume Number	57
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Passivation Silicon Tin MOSFETs High K dielectric materials Stress Logic gates silicon nitride (SN) Bias temperature instability (BTI) fluorine (F) germanium (Ge) $\hbox{HfO}_{2}$ high- $k$ gate dielectrics interface traps metal–oxide–semiconductor (MOS) devices MOS fieldeffect transistor (MOSFET) passivation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Interface-Engineered High-Mobility High-$k$ /Ge pMOSFETs With 1-nm Equivalent Oxide Thickness

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Effective Surface Passivation by Novel $hbox{SiH}_{4}$ –$hbox{NH}_{3}$ Treatment and BTI Characteristics on Interface-Engineered High-Mobility $hbox{HfO}_{2}$ -Gated Ge pMOSFETs

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