NDLI: Which Photodiode to Use: A Comparison of CMOS-Compatible Structures

Content Provider	IEEE Xplore Digital Library
Author	Murari, K. Etienne-Cummings, R. Thakor, N. Cauwenberghs, G.
Copyright Year	2001
Abstract	While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n⁺/p-sub, n-well/p-sub and p⁺/n-well/p-sub. All structures were fabricated in a 0.5 mum 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated-the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well /p-sub diode performed best in terms of sensitivity (an improvement of 3.5 times and 1.6 times over the n⁺/p-sub and p⁺/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1. 5times and 1.2 times improvement over the n⁺/p-sub and p⁺/n-well/p-sub diodes, respectively) while the p⁺/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity.
Sponsorship	IEEE Sensors Council
Starting Page	752
Ending Page	760
Page Count	9
File Size	1079691
File Format	PDF
ISSN	1530437X
Volume Number	9
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photodiodes Diodes Dark current Fabrication CMOS technology Solid state circuits Image sensors CMOS process Capacitive sensors Capacitance photodiodes Active pixel sensors CMOS
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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