NDLI: Flip Chip Bonding of 68 <formula formulatype=inline> <tex Notation=TeX>$times$</tex></formula> 68 MWIR LED Arrays

Content Provider	IEEE Xplore Digital Library
Author	Das, N.C. Taysing-Lara, M. Olver, K.A. Kiamilev, F. Prineas, J.P. Olesberg, J.T. Koerperick, E.J. Murray, L.M. Boggess, T.F.
Copyright Year	1999
Abstract	The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15-mum-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.
Sponsorship	IEEE Components, Packaging, and Manufacturing Technology Society International Microelectronics Assembly and Packaging Society (IMAPS)
Starting Page	9
Ending Page	13
Page Count	5
File Size	1924304
File Format	PDF
ISSN	1521334X
Volume Number	32
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-01-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Flip chip Light emitting diodes Bonding processes Indium Contacts Optical arrays Temperature Cathodes Anodes Current-voltage characteristics led array CMOS drivers contact resistance flip chip bonding
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electrical and Electronic Engineering

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