NDLI: Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: <emphasis emphasistype=smcaps>nor</emphasis> Gate Application

Content Provider	IEEE Xplore Digital Library
Author	Park, C.H. Lee, K.H. Oh, M.S. Lee, K. Im, S. Lee, B.H. Sung, M.M.
Copyright Year	1980
Abstract	We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick Al₂O₃ for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 ^degC. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm²/V middots, a high saturation current of 6 muA, and an on/off current ratio of ~ 10⁶, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.
Sponsorship	IEEE Electron Devices Society
Starting Page	30
Ending Page	32
Page Count	3
File Size	439758
File Format	PDF
ISSN	07413106
Volume Number	30
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Zinc oxide Glass Chromium Logic devices Electrodes Fabrication Dielectric substrates Atomic layer deposition Logic circuits ZnO Dual gate (DG) NOR logic gate thin-film transistors (TFTs)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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