NDLI: Integrated Silicon PIN Photodiodes Using Deep N-Well in a Standard 0.18-<formula formulatype=inline><tex Notation=TeX>$mu$</tex> </formula>m CMOS Technology

Content Provider	IEEE Xplore Digital Library
Author	Ciftcioglu, B. Lin Zhang Jie Zhang Marciante, J.R. Zuegel, J. Sobolewski, R. Hui Wu
Copyright Year	1983
Abstract	This paper studies integrated silicon photodiodes (PDs) implemented in standard CMOS technologies. A new PIN PD structure utilizing deep n-well is presented, and compared with conventional vertical and lateral PIN PDs at 850-nm wavelength and different bias conditions. Prototype PDs were fabricated in a 0.18-mum standard CMOS technology, and their DC, impulse and frequency responses were characterized. A 70 times 70 mum² PD with the new structure achieved a 3-dB bandwidth of 2.2 GHz in small signal at 5-V bias, whereas conventional lateral and vertical PIN PDs could only operate up to 0.94 GHz and 1.15 GHz, respectively. At 5-V bias, the impulse response of the new PD exhibited a full-width at half-maximum pulsewidth of 127 ps, versus 175 and 150 ps for the conventional lateral and vertical ones, respectively. At 15.5-V bias, the bandwidth of this new PD reached 3.13 GHz, with an impulse response pulsewidth of 102 ps. The responsivity of all prototype PDs was measured at approximately 0.14 A/W up to 10-V bias, which corresponded to a quantum efficiency of 20%. The responsivity of the new PD could be further increased to 0.4 A/W or 58% quantum efficiency, when operating in the avalanche region at 16.2-V bias.
Sponsorship	IEEE Lasers and Electro-Optics Society Optical Society of America
Starting Page	3303
Ending Page	3313
Page Count	11
File Size	1544631
File Format	PDF
ISSN	07338724
Volume Number	27
Issue Number	15
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon PIN photodiodes CMOS technology Optical receivers Bandwidth Vertical cavity surface emitting lasers Optical interconnections High speed optical techniques Surface emitting lasers Integrated circuit technology
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics

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