NDLI: Successful Application of the 8-band <formula formulatype=inline> <tex Notation=TeX>${mbi{k}}{cdot}$</tex></formula><formula formulatype=inline> <tex Notation=TeX>${mbi{p}}$</tex></formula> Theory to Optical Properties of Highly Strained In(Ga)As/InGaAs Quantum Wells With Strong Conduction-Valence Band Coupling

Content Provider	IEEE Xplore Digital Library
Author	Fujisawa, T. Sato, T. Mitsuhara, M. Kakitsuka, T. Yamanaka, T. Kondo, Y. Kano, F.
Copyright Year	1965
Abstract	Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells on InP with the bandgap wavelength longer than 2 mum are analyzed by using 6- and 8-band kmiddotp theory. It is demonstrated that the 8-band model is indispensable for the analysis of highly strained In(Ga)As/InGaAs quantum wells due to the strong coupling between conduction and valence bands induced by large strain in the well. Furthermore, an energy correction originating from the interaction between the spin-orbit coupling and the strain, which has been discarded in conventional kmiddotp theory, is taken into account, and the role of the effect for highly strained quantum wells is discussed. The photoluminescence peak wavelength and absorption spectra of In(Ga)As/InGaAs quantum wells calculated by 8-band model are in excellent agreement with those obtained by experiment, showing the validity of the results presented here.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1183
Ending Page	1191
Page Count	9
File Size	654523
File Format	PDF
ISSN	00189197
Volume Number	45
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitive sensors Indium gallium arsenide Quantum mechanics Effective mass Indium phosphide Absorption Laser theory High speed optical techniques Photoluminescence Optical coupling strained quantum well Band structure ${\mbi{k}} {\cdot} {\mbi{p}}$ theory microscopic theory quantum well lasser
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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