NDLI: The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI

Content Provider	IEEE Xplore Digital Library
Author	Madan, A. Verma, R. Arora, R. Wilcox, E.P. Cressler, J.D. Marshall, P.W. Schrimpf, R.D. Cheng, P.F. Del Castillo, L.Y. Qingqing Liang Freeman, G.
Copyright Year	1963
Abstract	The mechanism for ionizing radiation damage in multi-finger SOI CMOS devices is presented for the first time. We analyzed the effects of shallow-trench isolation on ionizing radiation response of 65 nm Silicon-On-Insulator (SOI) CMOS technology. The radiation response of the CMOS devices was investigated using 63 MeV protons and 10 keV X-rays. The implications of proton irradiation and X-ray irradiation on the dc and RF performance of these devices are presented. The cut-off frequency is degraded due to post-irradiation degradation of device transconductance. Even though there is charge-accumulation in the buried-oxide, there is minimal impact on the front-gate characteristics of the partially-depleted SOI devices in this 65 nm CMOS technology. The implications of parasitic conduction along the STI on device design constraints, particularly for varying device width and number of gate fingers, are discussed in the context of high performance RF CMOS technology. These results suggest that body-contacting schemes which eliminate sidewalls (e.g., H-body, T-body) will provide the necessary total-dose radiation tolerance for multi-finger analog and RF devices, without additional hardening techniques.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	3256
Ending Page	3261
Page Count	6
File Size	946023
File Format	PDF
ISSN	00189499
Volume Number	56
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ionizing radiation CMOS technology Radio frequency Silicon on insulator technology Protons X-rays Degradation Isolation technology Cutoff frequency Transconductance total dose CMOS proton radiation radio-frequency (RF) technology silicon-on-insulator (SOI)
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

Symmetric Vertical Parallel Plate Capacitors for On-Chip RF Circuits in 65-nm SOI Technology

Total-Ionizing-Dose Effects in Modern CMOS Technologies

Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime

Manufacturable Parasitic-Aware Circuit-Level FETs in 65-nm SOI CMOS Technology

An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits

Comprehensive Study of Total Ionizing Dose Damage Mechanisms and Their Effects on Noise Sources in a 90 nm CMOS Technology

Effects of gate structures on the RF performance in PD SOI MOSFETs

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI

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