NDLI: Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations

Content Provider	IEEE Xplore Digital Library
Author	Chao-Ching Cheng Chao-Hsin Chien Guang-Li Luo Yu-Ting Ling Ruey-Dar Chang Chi-Chung Kei Chien-Nan Hsiao Jun-Cheng Liu Chun-Yen Chang
Copyright Year	1963
Abstract	In this paper, we present MEDICI simulations of the admittance-voltage properties of Ge and Si MOS devices, including analyses of substrate conductance <i>G</i><sub>sub</sub> and high-low transition frequency <i>f</i><sub>tran</sub>, to explore the differences in the minority-carrier response. The Arrhenius-dependent <i>G</i><sub>sub</sub> characteristics revealed that a larger energy loss-by at least four orders of magnitude-occurs in Ge than in Si, reflecting the fast minority-carrier response rate, i.e., a higher value of <i>f</i><sub>tran</sub>. We confirmed that the higher intrinsic carrier concentration in Ge, through the generation/recombination of midgap trap levels as well as the diffusion mechanism, resulted in the onset of low-frequency <i>C</i>- <i>V</i> curves in the kilohertz regime, accompanying the gate-independent inversion conductance. The experimental data obtained from Al<sub>2</sub>O<sub>3</sub>/Ge MOS capacitors were consistent with the values of <i>G</i><sub>sub</sub> and <i>f</i><sub>tran</sub> obtained from MEDICI predictions and theoretical calculations. In addition, upon increasing the inversion biases, we observed shifts in the <i>G</i><sub>sub</sub>/<i>f</i> conductance peaks to low frequencies that mainly arose from the transition of minority carriers with bulk traps in the depletion layer. Meanwhile, we estimated that the bulky defects of ca. ( 2-4) ×10<sup>15</sup> cm<sup>-3</sup> exist in present-day low-doped Ge wafers.
Sponsorship	IEEE Electron Devices Society
Starting Page	1118
Ending Page	1127
Page Count	10
File Size	2013478
File Format	PDF
ISSN	00189383
Volume Number	56
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Silicon Substrates Frequency measurement MOS capacitors Temperature Temperature dependence substrate conductance Bulk trap germanium (Ge) MEDICI simulation minority-carrier response MOS capacitor
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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