NDLI: Effect of 0.5 wt% Cu in Sn-3.5%Ag Solder to Retard Interfacial Reactions With the Electroless Ni-P Metallization for BGA Solder Joints Application

Content Provider	IEEE Xplore Digital Library
Author	Alam, M.O. Chan, Y.C.
Copyright Year	1999
Abstract	Among the most advanced microelectronic packages, ball-grid-array (BGA) technology are expected to have increasing applications because of their higher input-output connection density achieved through area-array solder joints. In this study, the role of 0.5 wt % Cu in the interfacial reaction between the Sn-3.5%Ag solder and the electroless Ni-P metallization on the BGA substrate was investigated. Sn-3.5%Ag and Sn-3.5% Ag-0.5%Cu solders were reflowed on the electroless Ni-P layer at the peak temperature of 240^degC and the duration above 220^degC was 0.5 min. After reflowing, the samples were aged at 150^degC temperature for different times ranging from 24 h to 400h. It was found that Cu addition retards the reaction rate with the electroless Ni-P layer significantly-especially during reflow soldering. However, among different layers formed by interfacial reactions, the P-rich Ni layer grew at a slower rate when Cu was present in the solder. Higher solder reaction rate for the Cu free alloys was explained in term of higher Ni dissolution and rapid formation of Ni₃Sn₄. Due to a higher reaction rate, the amorphous electroless Ni-P layer was transformed to the crystalline phases of Ni-P compounds rapidly. The presence of 0.5 wt% Cu in the Sn-3.5%Ag solder alloy reduces Ni dissolutions in the liquid solder and changes the driving force of interfacial reactions forming (Cu,Ni)₆Sn₅ instead of Ni₃Sn₄. The growth of (Cu,Ni)₆Sn₅ requires less Ni compared to the growth of Ni₃Sn₄ and thus reduces the consumption of the electroless Ni-P as well as the growth of the P-rich crystalline Ni layer. Retardation of the interfacial reactions, in particular, a thin P-rich crystalline layer reduces the chance of solder joint failure, thus improves the reliability of solder joint with electroless Ni-P metallization. Results from other concurrent investigators were also compared and discussed to understand the findings from this study.
Sponsorship	IEEE Components, Packaging, and Manufacturing Technology Society
Starting Page	431
Ending Page	438
Page Count	8
File Size	5088077
File Format	PDF
ISSN	15213331
Volume Number	31
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Metallization Soldering Tin Crystallization Copper alloys Nickel alloys Microelectronics Packaging Temperature Aging solder joint Ball grid array (BGA) electroless Ni interfacial reaction intermetallic compound (IMC) reflow
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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